| PART |
Description |
Maker |
| GT8G131 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
N CHANNEL MOS TYPE (STROBE FLASH APPLICATIONS)
|
Toshiba Semiconductor
|
| GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT20G101SM |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS
|
TOSHIBA
|
| GT15G101 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT25G102 |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| GT20G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| FGR15N40A |
Strobe Flash N-Channel Logic Level IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| CY25AAJ-8 CY25AAJ-8F |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Nch IGBT for STROBE FLASHER
|
Mitsubishi Electric Corporation
POWEREX [Powerex Power Semiconductors]
POWEREX[Powerex Power Semiconductors]
|
| RJH60D2DPE-00-J3 RJH60D2DPE |
20 A, 600 V, N-CHANNEL IGBT SC-83, LDPAK-3
Silicon N Channel IGBT Application: Inverter
|
NXP Semiconductors N.V.
Renesas Electronics Corporation
|
| RJH60C9DPD-00-J2 RJH60C9DPD |
10 A, 600 V, N-CHANNEL IGBT SC-63, DPAK-3
Silicon N Channel IGBT Application: Inverter
|
Renesas Electronics Corporation
|
